サイリスタおよびダイオードモジュール
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MT1-250-65-B0
サイリスタおよびダイオードモジュール
| VDRM/ VRRM [V]: | 6500 |
| IFAV/ITAV (Tс,°C) [A]: | 250 (86) |
| VFM/VTM (Tc=25°С) [V]: | 2.80 |
| IFM/ITM (Tc=25°С) [A]: | 785 |
| VT(TO)/Tjmax [V]: | 1.800 |
| rT/Tjmax [mΩ]: | 1.651 |
| tq [μs]: | 630 |
| Tjmax [°С]: | 125 |
| Rthjc [°С/W]: | 0.0550 |
| Package: | M.B0 |
| Baseplate width/length [mm]: | 50/115 |
| Design: | 一位置 |
| Type: | 一位置サイリスタ |
- 文書と証明書
- データシート MT1-250-65-B0
- 説明
Single-component thyristor module with baseplate width 50 mm
Main features:
- Pressure contact design
- Industry-standard housing size
- Insulated baseplate
- Insulation up to 7 kV АС (50 Hz, 1 min.)
- Partial discharges below 10 pC (at 2860 V)
- 用途
The modules are designed for energy converters and other AC and DC power energy systems.
Main applications:
- Drive control systems
- Rectifying bridges
- Direct current regulators
- DC drive control
- Power sources
